n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Cer.

These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(m.

RADIATION HARDENED POWER MOSFET

IRHY3130CM

IRHY3230CM

IRHY4130CM

IRHY4230CM

IRHY53034CM

IRHY53130CM

IRHY53230CM

IRHY53Z30CM

IRHY54034CM

IRHY54130CM

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